View IRF8736PBF_4287631.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 97120
IRF8736PBF
HEXFET(R) Power MOSFET
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead -Free
VDSS
RDS(on) max Qg Typ. 30V 4.8m:@VGS = 10V 17nC
S S S G
1 2 3 4
8 7
A A D D D D
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max.
30 20 18 14.4 144 2.5 1.6 0.02 -55 to + 150
Units
V
f f
c
A W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RJL RJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 9
www.irf.com
1
08/1/07
IRF8736PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 52 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.022 3.9 5.5 1.8 -6.1 --- --- --- --- --- 17 4.4 1.9 5.8 4.9 7.7 7.1 1.3 12 15 13 7.5 2315 449 219 --- --- 4.8 6.8 2.35 --- 1.0 150 100 -100 --- 26 --- --- --- --- --- --- 2.2 --- --- --- --- --- --- --- Typ. --- --- nC nC V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 18A V VGS = 4.5V, ID = 14.4A VDS = VGS, ID = 50A
e
e
mV/C A VDS = 24V, VGS = 0V nA S VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 14.4A VDS = 15V VGS = 4.5V ID = 14.4A See Fig. 16 VDS = 10V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 14.4A ns
e
RG = 1.8 See Fig. 14
VGS = 0V VDS = 15V = 1.0MHz Max. 126 14.4 Units mJ A
pF
Avalanche Characteristics
EAS IAR
d
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 16 19 3.1 A 144 1.0 24 29 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 14.4A, VGS = 0V TJ = 25C, IF = 14.4A, VDD = 10V di/dt = 300A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF8736PBF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
TOP
100
BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
1
10
0.1
1
2.3V 60s PULSE WIDTH Tj = 150C
0.01
2.3V
60s PULSE WIDTH Tj = 25C
0.1 10 100 0.1 1
0.001 0.1 1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
ID = 18A VGS = 10V
1.5
10
TJ = 150C
1
TJ = 25C
0.1
1.0
VDS = 15V
60s PULSE WIDTH
0.01 1.0 2.0 3.0 4.0 5.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF8736PBF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
5 ID= 14.4A 4 VDS= 24V VDS= 15V
C, Capacitance (pF)
Ciss
1000
3
Coss Crss
2
1
100 1 10 100
0 0 4 8 12 16 20 Qg, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
100
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100 100sec 1msec 10msec 1
TJ = 150C
10
10
TJ = 25C
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2
TA = 25C Tj = 150C Single Pulse 0.1 1 10 100
0.1
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF8736PBF
20 2.4
16
VGS(th) Gate threshold Voltage (V)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8
ID , Drain Current (A)
12
ID = 50A
8
4
0 25 50 75 100 125 150
-75
-50
-25
0
25
50
75
100
125
150
TA, Ambient Temperature (C)
TJ , Temperature ( C )
Fig 9. Maximum Drain Current Vs. Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
Thermal Response ( ZthJA )
10
0.20 0.10 0.05 0.02 0.01
J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 a 2 3 4 4
1
0.1
Ci= i/Ri Ci i/Ri
Ri (C/W) (sec) 1.396574 0.000246 7.206851 0.037927 27.1278 1.0882 14.26877 30.3
SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
1 10 100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF8736PBF
600
15V
EAS, Single Pulse Avalanche Energy (mJ)
500
VDS
L
DRIVER
400
ID 1.28A 1.75A BOTTOM 14.4A
TOP
RG
20V
D.U.T
IAS tp
+ V - DD
A
300
0.01
200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
100
0 25 50 75 100 125 150
Starting T J, Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
RD
V DS V GS RG
Fig 12b. Unclamped Inductive Waveforms
D.U.T.
+
-V DD
Current Regulator Same Type as D.U.T.
V GS
Pulse Width 1 s Duty Factor 0.1 %
50K 12V .2F .3F
Fig 14a. Switching Time Test Circuit
D.U.T. + V - DS
VDS 90%
VGS
3mA
IG
ID
Current Sampling Resistors
10% VGS
td(on) tr t d(off) tf
Fig 13. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
6
www.irf.com
IRF8736PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
www.irf.com
7
IRF8736PBF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
9 6 ' & ! % " $ $ # 7
9 DH 6 6 i p 9 @ r r C F G DI8 C@ T H DI H 6Y %'' $"! (' # ! " &$ (' (%' '( $&# #(& $AA76T D8 !$AA76T D8 !## !!'# (% (( $ % A' A H DGGDH @ U@S T H DI H 6Y "$ &$ !$ "" $ ( !$ #' $ "' # !&AA7 6TD8 %"$AA76T D8 $' %! !$ $ # !& A A'
% @
C !$Ab dA
6
%Y
r
r
6
FAA#$ 8 Ab#dA 'YAG & 'YAp
'YAi !$Ab dA
6 867
APPUQSDIU
IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@
'YA&!Ab!'d
%#%Ab!$$d
"YA !&Ab$d
SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U
'YA &'Ab&d
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
www.irf.com
IRF8736PBF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.21mH, RG = 25, IAS = 14.4A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board R is measured at TJ approximately 90C
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.8/2007
www.irf.com
9

▲Up To Search▲

Price & Availability of IRF8736PBF

	To Download IRF8736PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .